On October 15, 2026, Infineon and Wolfspeed announced an expanded and extended silicon carbide wafer supply agreement, extending their partnership of more than 20 years from 150mm to 200mm wafers. The multi-year agreement secures substrate supply for Infineon’s 200mm SiC manufacturing ramp while providing certainty and long-term demand for Wolfspeed’s under-pressure materials business.
A 200mm wafer has a theoretical area about 1.78 times that of a 150mm wafer, accommodating more dies under similar chip sizes and process conditions, thereby lowering per-substrate costs and improving manufacturing efficiency. Infineon delivered its first 200mm SiC products from Villach, Austria in February 2025, and its Kulim, Malaysia site is converting lines from 150mm to 200mm. Demand-side data is equally striking: Guosen Securities research shows that from January to May 2026, SiC MOSFETs accounted for 30.9% of main-drive modules in China’s new-energy insured passenger vehicles, 800V models reached roughly 33% penetration with 77% of those using SiC, and AI data center HVDC power is becoming the second demand curve. Yole Group projects the global SiC power device market to reach approximately USD 11 billion by 2031. Domestic substrate vendors are positioning in parallel — SICC (Tianyue Advanced) held a 27.6% share of the global conductive SiC substrate market in 2025, ranking first worldwide, with a 51.3% share in 200mm conductive substrates, and posted RMB 1.559 billion in revenue for the first three quarters of 2026, up 40.22% year over year. Bosch, STMicroelectronics, and Coherent are also advancing 200mm layouts.
From an industry landscape perspective, the focus of competition in the SiC industry is shifting from devices toward substrate cost plus wafer size: whoever first moves 200mm from process validation to stable mass production will seize cost and scale advantages in the incremental markets of new-energy vehicles, photovoltaic storage, and AI data center power. Multi-source substrate procurement and rising domestic vendor shares are reshaping the global power semiconductor supply chain — whether 200mm truly delivers cost advantages ultimately depends on yields, capacity utilization, and orders keeping pace together.
The growing penetration and improving economics of SiC power devices will continue to open up power design space across Junyi Microelectronics’ hardware platforms: the wide-voltage power supply and high-efficiency power modules of the 5G-EDGE-3399Pro/AI-BOX-3588 edge computing hosts, the industrial power chain of the IPC-i5-1235U mini PC, and the power architectures of the J-3568/J-3576/J-3588 core boards, K-series edge intelligent motherboards, and touch panel all-in-one machines can all benefit from SiC devices’ continued progress in power density and conversion efficiency — providing device-level support for smaller, more reliable, wide-temperature complete machines.
Source: Jiemian News: Infineon Renews with Wolfspeed — the Next Stage of 200mm Silicon Carbide (2026-10-25)